Numem Inc. Exhibits at IP-SoC Santa Clara 2019

Numem Inc. Exhibits at IP-SoC Santa Clara 2019

Press Release ( - SUNNYVALE, Calif. - Apr 09, 2019 - Numem (formerly known as NVMEngines, Inc.), will be exhibiting its NuRAMTM MRAM Memory IP test chip at the IP-SoC 2019, on April 9, 2019 at the Hyatt Regency Center in Santa Clara.

Numem’s NuRAMTM memory IP Cores and Design Automation Tools are based on MRAM and other Resistive RAM technologies, and silicon proven over multiple tapeouts and 1,000+ devices.

They provide an excellent alternative for Microcontroller, Processor, AI Chip, Flash Memory Subsystem and in general SoC Designs to provide a lower power, higher performance and higher endurance solution than Flash and 2-3x smaller area and 7x lower leakage current than SRAM. For AI and Microprocessor designers looking for a larger L3/L4 Cache, Numem’s NuRAMTM enables to embed up to 3x larger memory sizes in a given area and the ability to retain data at ultra-low power for battery saving or in case of power outage. Numem’s NuRAMTM IP cores bring power/performance/cost benefits and are expected to improve with process scaling over time.

Numem will be exhibiting from 9:00 a.m. to 5:00 p.m., demonstrating its MRAM Memory IP test chip.

5101 Great America Pkwy, Santa Clara, CA 95054, USA

About Numem

Numem (formerly NVMEngines) headquartered in Sunnyvale, California, is the leading provider of advanced NVRAM Memory IP Cores based on its patented “NuRAMTM technology. Leveraging 50years’ experience in MRAM/Resistive RAM memory design, multiple test chips, and data collected on 1,000+ devices, Numem provides an excellent SRAM and eFlash alternative to SoC Designers and Architects that can also aggregate ROM, EEPROM and OTP. Numem’s NuRAMTM is targeting Microcontroller, Processor, A.I./DSP Processing, and in general SoC Designs for applications including: IoT, Autonomous Vehicle, Smart Factory, Smart Home, Smart Healthcare and Flash SSD. Numem’s silicon-proven NuRAMTM memory IP Cores enable differentiation a 3x reduction in memory size (or higher density) and 7x lower standby power dissipation.

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Source : Numem Inc.
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CATEGORIES : High Technology


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